Indexing Metadata
| 1 | Title of the Article | Band Gap Engineering of Wurtzite Silicon by Uniaxial Pressure |
| 2 | Author's name | Ziwei Cui: Space Star Technology CO., LTD., Beijing, China, (e-mail: zwcui129@gmail.com |
| 3 | Author's name | |
| 4 | Subject | Information Technology |
| 5 | Keyword(s) | Electronic properties, Wurtzite silicon (WZ-Si), Uniaxial pressure |
| 6 | Abstract | Electronic properties of wurtzite silicon (WZ-Si) are investigated by first-principle calculation. It is found that WZ-Si is an indirect band-gap semiconductor at ambient condition. A uniaxial strain along the c-direction can reduce the direct energy gap at Γ significantly. Calculated pressure needed to compress WZ-Si is not too high, which shows strained WZ-Si would be potential in practical use. The effective mass of electron is found strongly dependent on strain which could be used to tailor the transport properties. |
| 7 | Publisher | Innovative Research Publication |
| 8 | Journal Name; vol., no. | International Journal of Innovative Research in Computer Science & Technology (IJIRCST); Volume-5 Issue-2 |
| 9 | Publication Date | March 2017 |
| 10 | Type | Peer-reviewed Article |
| 11 | Format | |
| 12 | Uniform Resource Identifier | https://ijircst.org/view_abstract.php?title=Band-Gap-Engineering-of-Wurtzite-Silicon-by-Uniaxial-Pressure&year=2017&vol=5&primary=QVJULTI5MA== |
| 13 | Digital Object Identifier(DOI) | 10.21276/ijircst.2017.5.2.3 https://doi.org/10.21276/ijircst.2017.5.2.3 |
| 14 | Language | English |
| 15 | Page No | 230-233 |
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